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Wolfspeed CAB450M12XM3 1200 V, 2.6 mΩ, XM3, Half-Bridge SiC Power Module

$720.40 CAD
Ships from United States Us

Don't miss out on this item!

There is only 1 left in stock.

Shipping options

No shipping price specified to CA
Ships from United States Us

Offer policy

OBO - Seller accepts offers on this item. Details

Purchase protection

Payment options

PayPal accepted
PayPal Credit accepted
Venmo accepted
PayPal, MasterCard, Visa, Discover, and American Express accepted
Maestro accepted
Amazon Pay accepted
Nuvei accepted

Shipping options

No shipping price specified to CA
Ships from United States Us

Offer policy

OBO - Seller accepts offers on this item. Details

Purchase protection

Payment options

PayPal accepted
PayPal Credit accepted
Venmo accepted
PayPal, MasterCard, Visa, Discover, and American Express accepted
Maestro accepted
Amazon Pay accepted
Nuvei accepted

Item traits

Category:

Diodes & Rectifiers

Quantity Available:

Only one in stock, order soon

Condition:

New – Open box

Brand:

Wolfspeed Lucid

Seller Notes:

“New open box”

Listing details

Shipping discount:

Seller pays shipping for this item.

Posted for sale:

July 27

Item number:

1761977635

Item description

Wolfspeed CAB450M12XM3 1200 V, 2.6 m?, XM3, Half-Bridge SiC Power Module Wolfspeed has developed the XM3 power module platform to maximize the benefits of Silicon Carbide, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The optimized packaging enables 175C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as traction drives, DC fast chargers, universal power supplies and automotive testing equipment. Features High Temperature (175 C) Operation Low Inductance (6.7 nH) Design Utilizes Latest 3rd Generation Silicon Carbide MOSFETS Integrated Temperature Sensor and Kelvin-Drain Connection Silicon Nitride Ceramic Substrate and Copper Baseplate Benefits Power Dense Footprint Enables Compact Systems Offset Terminal Layout Simplifies Bus Bar Design and Reduces System Stray Inductance Low Inductance Design Enables Fast Switching to Reduce Dynamic Losses SiN AMB Substrate and High Reliability Solders Enhance Lifetime Direct Gate Driver Mating Enables Compact Design with Low Inductance Applications Traction Drives Motor Drives UPS EV Chargers Industrial Automation Testing Power Supplies More Electric Aircraft and eVTOL Energy Generation/Smart Grids/Smart Energy Thanks for looking at our listing and supporting our small family business! SHELF: 2